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Manufacturer Part #

BSM300D12P4G101

2 N-Channel 1200 V 291 A 925 W Half Bridge Chassis Mount SiC Power Module

ECAD Model:
Mfr. Name: ROHM
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
ROHM BSM300D12P4G101 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Gate-Source Voltage-Max [Vgss]: 21V
Isolation Voltage-RMS: 2500V
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 291A
Configuration: Half Bridge
Operating Temp Range: -40°C to +150°C
Package Style:  Module
Mounting Method: Chassis Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
4
Multiple Of:
4
Total
$3,707.00
USD
Quantity
Web Price
4+
$926.75
Product Variant Information section