NXH015P120M3F1PTG in Tray by onsemi | Silicon Carbide Power Modules (SiC Power Modules) | Future Electronics
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Manufacturer Part #

NXH015P120M3F1PTG

EliteSiC Series N-Channel 1200 V 40A 15mOhm 198W SiC MOSFET PIM-18

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi NXH015P120M3F1PTG - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Gate-Source Voltage-Max [Vgss]: 22V
Mounting Style: Vertical
Isolation Voltage-RMS: 4800V
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 77A
Configuration: Half Bridge
Operating Temp Range: -40°C to +175°C
Package Style:  Module
Mounting Method: Chassis Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
112
Factory Lead Time:
10 Weeks
Minimum Order:
28
Multiple Of:
28
Total
$1,729.28
USD
Quantity
Unit Price
28
$61.76
56+
$61.02
Product Variant Information section