Manufacturer Part #
25C040-I/P
25C040 Series 4 Kbit (512 x 8) 5.5 V Through Hole SPI Bus Serial EEPROM - DIP-8
| | |||||||||||
| | |||||||||||
| Mfr. Name: | Microchip | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:60 per Tube Package Style:DIP-8 Mounting Method:Through Hole | ||||||||||
| Date Code: | 1852 | ||||||||||
Microchip 25C040-I/P - Product Specification
Shipping Information:
ECCN:
PCN Information:
Description of Change: Qualification of Microchip Technology Gresham ? Fab 4 (GRTM) as a new fabrication location for the selected 24AA00xx, 24AA65, 24C00, 24C65, 24LC00, 24LC21xx, 24LC22A, 24LC65, 24LCS21A, 24LCS22A, 25AA040, 25AA080, 25AA160, 25C040, 25C080, 25C160, 25LC040, 25LC080, 25LC160, 93AA46, 93AA56, 93AA66, 93AA76, 93AA86, 93C46B, 93C56, 93C66xx, 93C76, 93C86, 93LC46xx, 93LC56, 93LC66xx, 93LC76 and 93LC86 device families of 77k technology available in various packages.Reason for Change: To improve manufacturability and on time delivery performance by qualifying a new fabrication location (GRTM - FAB 4), which is a Microchip-owned facility that offers significant expansion potential to better meet future client demand.
Part Status:
Microchip 25C040-I/P - Technical Attributes
| Memory Density: | 4kb |
| Memory Organization: | 512 x 8 |
| Supply Voltage-Nom: | 4.5V to 5.5V |
| Clock Frequency-Max: | 3MHz |
| Write Cycle Time-Max (tWC): | 5ms |
| Package Style: | DIP-8 |
| Mounting Method: | Through Hole |
Features & Applications
The 25C040 (25XX040*) series of 4 Kbit serial Electrically Erasable PROM is accessed via a simple Serial Peripheral Interface™ (SPI™) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input.
Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts. Also, write operations to the device can be disabled via the write-protect pin (WP).
Features:
- Low-power CMOS technology
- Write current: 3 mA typical
- Read current: 500 μA typical
- Standby current: 500 nA typical
- 512 x 8-bit organization
- 16 byte page
- Write cycle time: 5 ms max.
- Self-timed ERASE and WRITE cycles
- Block write protection
- Protect none, 1/4, 1/2 or all of array
- Built-in write protection
- Power on/off data protection circuitry
- Write enable latch
- Write-protect pin
- Sequential read
- High reliability
- Endurance: 1M cycles
- Data retention: > 200 years
- ESD protection: > 4000V
- 8-pin PDIP, SOIC, and TSSOP packages
- Temperature ranges supported:
Available Packaging
Package Qty:
60 per Tube
Package Style:
DIP-8
Mounting Method:
Through Hole