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Référence fabricant
FM25L16B-G
FM25L16B Series 16 kb (2048 x 8) Serial 3 V F-RAM Memory - SOIC-8
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :97 par Tube Style d'emballage :SOIC-8 Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2343 | ||||||||||
Infineon FM25L16B-G - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change information:Several changes affecting the 4-Kbit to 256-Kbit Industrial Grade F-RAM productsReason/Motivation:New design revision that incorporates advantages of Infineon?s Excelon? architecture to the 4-Kbit to 64-Kbit devices. Migrating to the new die revision will enable customers to benefit from continued product supply and long term technical support on these products.Ensure delivery capability by establishing alternative assembly and packaging components to assure continuity of supply and enable flexible manufacturing.Due to continuously raising demand for Infineon F-RAM products, we have extended our final test capacity to Greatek Taiwan as additional location of our BE test cluster, to assure continuity of supply.
Detailed change information:Several changes affecting the 4-Kbit to 256-Kbit Industrial Grade F-RAM productsReason/Motivation:New design revision that incorporates advantages of Infineon?s Excelon? architecture to the 4-Kbit to 64-Kbit devices. Migrating to the new die revision will enable customers to benefit from continued product supply and long term technical support on these products.Ensure delivery capability by establishing alternative assembly and packaging components to assure continuity of supply and enable flexible manufacturing.Due to continuously raising demand for Infineon F-RAM products, we have extended our final test capacity to Greatek Taiwan as additional location of our BE test cluster, to assure continuity of supply.
Detailed change information:Several changes affecting the 4-Kbit to 256-Kbit Industrial Grade F-RAM productsReason/Motivation:New design revision that incorporates advantages of Infineon?s Excelon? architecture to the 4-Kbit to 64-Kbit devices. Migrating to the new die revision will enable customers to benefit from continued product supply and long term technical support on these products.Ensure delivery capability by establishing alternative assembly and packaging components to assure continuity of supply and enable flexible manufacturing.Due to continuously raising demand for Infineon F-RAM products, we have extended our final test capacity to Greatek Taiwan as additional location of our BE test cluster, to assure continuity of supply.
Detailed change information:Several changes affecting the 4-Kbit to 256-Kbit Industrial Grade F-RAM productsReason/Motivation:New design revision that incorporates advantages of Infineon?s Excelon? architecture to the 4-Kbit to 64-Kbit devices. Migrating to the new die revision will enable customers to benefit from continued product supply and long term technical support on these products.Ensure delivery capability by establishing alternative assembly and packaging components to assure continuity of supply and enable flexible manufacturing.Due to continuously raising demand for Infineon F-RAM products, we have extended our final test capacity to Greatek Taiwan as additional location of our BE test cluster, to assure continuity of supply.
Description:Several changes affecting the 4-Kbit to 256-Kbit Industrial Grade F-RAM productsReason:New design revision that incorporates advantages of Infineon?s Excelon? architecture to the 4 Kb to 64 Kb devices. Migrating to the new die revision will enable customers to benefit from continued product supply and long termtechnical support on these products. Ensure delivery capability by establishing alternative assembly and packagingcomponents to assure continuity of supply and enable flexible manufacturing.Due to continuously raising demand for Infineon FRAM products, we have extended our final test capacity to Greatek Taiwan as additional location of our BEtest cluster, to assure continuity of supply.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=FM25L16B-G&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--memory--RAM--nvram--fram-mram/fm25l16b-g-cypress-5003457
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=FM25L16B-G&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--memory--RAM--nvram--fram-mram/fm25l16b-g-cypress-5003457
Infineon FM25L16B-G - Caractéristiques techniques
| FRAM Type: | Non Volatile |
| Memory Density: | 16kb |
| Interface Type: | SPI |
| Memory Organization: | 2K x 8 |
| Supply Voltage-Nom: | 2.7V to 3.6V |
| Temperature Range: | -40°C to +85°C |
| Supply Current: | 3mA |
| Power Dissipation: | 1W |
| Storage Temperature Range: | -65°C to +125°C |
| No of Terminals: | 8 |
| Moisture Sensitivity Level: | 3 |
| Style d'emballage : | SOIC-8 |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
97 par Tube
Style d'emballage :
SOIC-8
Méthode de montage :
Surface Mount