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Référence fabricant
FM25CL64B-G
FM25CL64B Series 64 kb (8 K x 8) 3.3 V Serial F-RAM Memory - SOIC-8
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :97 par Tube Style d'emballage :SOIC-8 Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2507 | ||||||||||
Infineon FM25CL64B-G - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change information:Several changes affecting the 4-Kbit to 256-Kbit Industrial Grade F-RAM productsReason/Motivation:New design revision that incorporates advantages of Infineon?s Excelon? architecture to the 4-Kbit to 64-Kbit devices. Migrating to the new die revision will enable customers to benefit from continued product supply and long term technical support on these products.Ensure delivery capability by establishing alternative assembly and packaging components to assure continuity of supply and enable flexible manufacturing.Due to continuously raising demand for Infineon F-RAM products, we have extended our final test capacity to Greatek Taiwan as additional location of our BE test cluster, to assure continuity of supply.
Detailed change information:Several changes affecting the 4-Kbit to 256-Kbit Industrial Grade F-RAM productsReason/Motivation:New design revision that incorporates advantages of Infineon?s Excelon? architecture to the 4-Kbit to 64-Kbit devices. Migrating to the new die revision will enable customers to benefit from continued product supply and long term technical support on these products.Ensure delivery capability by establishing alternative assembly and packaging components to assure continuity of supply and enable flexible manufacturing.Due to continuously raising demand for Infineon F-RAM products, we have extended our final test capacity to Greatek Taiwan as additional location of our BE test cluster, to assure continuity of supply.
Detailed change information:Several changes affecting the 4-Kbit to 256-Kbit Industrial Grade F-RAM productsReason/Motivation:New design revision that incorporates advantages of Infineon?s Excelon? architecture to the 4-Kbit to 64-Kbit devices. Migrating to the new die revision will enable customers to benefit from continued product supply and long term technical support on these products.Ensure delivery capability by establishing alternative assembly and packaging components to assure continuity of supply and enable flexible manufacturing.Due to continuously raising demand for Infineon F-RAM products, we have extended our final test capacity to Greatek Taiwan as additional location of our BE test cluster, to assure continuity of supply.
Detailed change information:Several changes affecting the 4-Kbit to 256-Kbit Industrial Grade F-RAM productsReason/Motivation:New design revision that incorporates advantages of Infineon?s Excelon? architecture to the 4-Kbit to 64-Kbit devices. Migrating to the new die revision will enable customers to benefit from continued product supply and long term technical support on these products.Ensure delivery capability by establishing alternative assembly and packaging components to assure continuity of supply and enable flexible manufacturing.Due to continuously raising demand for Infineon F-RAM products, we have extended our final test capacity to Greatek Taiwan as additional location of our BE test cluster, to assure continuity of supply.
Description:Several changes affecting the 4-Kbit to 256-Kbit Industrial Grade F-RAM productsReason:New design revision that incorporates advantages of Infineon?s Excelon? architecture to the 4 Kb to 64 Kb devices. Migrating to the new die revision will enable customers to benefit from continued product supply and long termtechnical support on these products. Ensure delivery capability by establishing alternative assembly and packagingcomponents to assure continuity of supply and enable flexible manufacturing.Due to continuously raising demand for Infineon FRAM products, we have extended our final test capacity to Greatek Taiwan as additional location of our BEtest cluster, to assure continuity of supply.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=FM25CL64B-G&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--memory--ram--nvram--fram-mram/fm25cl64b-g-cypress-9003456
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=FM25CL64B-G&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--memory--ram--nvram--fram-mram/fm25cl64b-g-cypress-9003456
Infineon FM25CL64B-G - Caractéristiques techniques
| FRAM Type: | Non Volatile |
| Memory Density: | 64kb |
| Interface Type: | SPI |
| Memory Organization: | 8K x 8 |
| Supply Voltage-Nom: | 2.7V to 3.65V |
| Temperature Range: | -40°C to +85°C |
| Supply Current: | 3mA |
| Power Dissipation: | 1W |
| Storage Temperature Range: | -65°C to +125°C |
| No of Terminals: | 8 |
| Moisture Sensitivity Level: | 3 |
| Style d'emballage : | SOIC-8 |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
97 par Tube
Style d'emballage :
SOIC-8
Méthode de montage :
Surface Mount