text.skipToContent text.skipToNavigation

Référence fabricant

H11D1M

DIP6 Through Hole Single Channel 300 V 7500 Vrms Phototransistor Optocoupler

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
onsemi H11D1M - Caractéristiques techniques
Attributes Table
No of Channels: 1
Isolation Voltage-RMS: 4170V
Output Voltage-Max: 300V
CTR-Min: 20%
Operating Temp-Max: 100°C
Style d'emballage :  DIP-6
Méthode de montage : Through Hole
Fonctionnalités et applications

The H11D1M is a phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

Features:

  • High voltage:
    • H11D1M, H11D2M, BVCER = 300V
    • H11D3M, BVCER = 200V
  • High isolation voltage:
  • 7500 VAC peak, 1 second
  • Underwriters Laboratory (UL) recognized File # E90700, Volume 2
  • Power supply regulators
  • Digital logic inputs
  • Microprocessor inputs
  • Appliance sensor systems
  • Industrial controls

Applications:

  • Power supply regulators
  • Digital logic inputs
  • Microprocessor inputs
  • Appliance sensor systems
  • Industrial controls
  • Interfacing coupling systems of different potentials and impedances
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
14 000
Délai d'usine :
15 Semaines
Commande minimale :
3000
Multiples de :
1000
Total 
780,00 $
USD
Quantité
Prix unitaire
1
$0.28
125
$0.275
400
$0.27
1 500
$0.26
5 000+
$0.25
Product Variant Information section