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Manufacturer Part #

QRD1114

QRD1114 Series 30 V 50 mA Phototransistor Reflective Object Sensor

Product Specification Section
onsemi QRD1114 - Technical Attributes
Attributes Table
Type: Reflective
Wavelength: 940nm
CE Voltage-Max: 30V
Forward (Drive) Current: 50mA
Power Dissipation: 100mW
Mounting Method: Through Hole
Features & Applications

The QRD1114 is a reflective sensor which consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic housing.

Features:

  • Phototransistor Output
  • No contact surface sensing
  • Unfocused for sensing diffused surfaces
  • Compact Package
  • Daylight filter on sensor
Pricing Section
Global Stock:
5,900
USA:
1,900
Germany (Online Only):
4,000
1,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
21 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$0.58
USD
Quantity
Unit Price
1
$0.58
75
$0.565
250
$0.55
750
$0.54
2,500+
$0.515