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Manufacturer Part #

QRD1114

QRD1114 Series 30 V 50 mA Phototransistor Reflective Object Sensor

Product Specification Section
onsemi QRD1114 - Technical Attributes
Attributes Table
Type: Reflective
Wavelength: 940nm
CE Voltage-Max: 30V
Forward (Drive) Current: 50mA
Power Dissipation: 100mW
Mounting Method: Through Hole
Features & Applications

The QRD1114 is a reflective sensor which consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic housing.

Features:

  • Phototransistor Output
  • No contact surface sensing
  • Unfocused for sensing diffused surfaces
  • Compact Package
  • Daylight filter on sensor
Pricing Section
Global Stock:
17,100
USA:
17,100
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
900
Multiple Of:
900
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$463.50
USD
Quantity
Unit Price
100
$0.515
1,800
$0.515
2,700
$0.515
3,600
$0.515
4,500+
$0.515