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Diodes Incorporated DGD0579UFNQ High-Side and Low-Side Gate Driver
In U-DFN3030-10 packaging
Diodes Incorporated features the DGD0579UFNQ, a high-frequency, high-side and low-side gate driver featuring an internal bootstrap diode and is designed to efficiently drive N-channel MOSFETs in a half-bridge configuration, with a floating high-side driver rated up to 100V.
Engineered for seamless integration, the DGD0579UFNQ supports standard TTL and CMOS logic levels (down to 3.3V), ensuring easy interfacing with MCUs. Built-in under-voltage lockout (UVLO) on both the high and low sides safeguards MOSFETs against supply loss, while cross-conduction prevention logic enhances reliability by ensuring that the HO and LO are never on simultaneously.
With fast, well-matched propagation delays, this gate driver enables higher switching frequencies, allowing for more compact power designs with reduced component size. The inclusion of an internal bootstrap diode further minimizes board space.
The DGD0579UFNQ by Diodes Incorporated comes in a space-saving U-DFN3030-10 package and operates reliably across an extended -40°C to +125°C temperature range.
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