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Infineon Parallel NOR Flash Memory

A broad portfolio of high-performance products with unmatched longevity

Infineon offers the industry's broadest portfolio of high-performance parallel NOR Flash memory. Leveraging industry standard Floating Gate and proprietary MIRRORBIT™ technologies, these products deliver fast random access and high-density solutions.

The product line supports page mode, standard mode, and simultaneous read/write parallel NOR products. Each device requires only a single power supply for read and write functions and is entirely command set compatible with the JEDEC Flash standards.

Whether designing for industrial, automotive, communications or consumer markets, there is an Infineon Parallel NOR product that provides you with fast access times and high endurance cycles at an optimal cost.


  • Technology: 2-bit-per-cell MIRRORBIT™ technology with high-density devices based on 45 nm node
  • Density: 8 Mbit to 2 Gbit
  • Voltage: 1.8 to 3.0 V
  • Packaging: BGA, TSOP, KGD/KGW
  • Temperature:
    • Industrial (-40 to 85°C)
    • Industrial plus (-40 to 105°C)
    • Extended (-40 to 125°C)
    • AEC-Q100 Grade 1, 2, 3 (up to 125°C)
  • Performance
    • 55-110 ns initial access
    • 15-20 ns page access time
  • Automatic Error-Correction Code (ECC) in select devices
  • Advanced Sector Protection (ASP)
  • Up to 20 years data retention
  • Up to 1,000,000 program/ erase cycles


  • Industrial
    • Smart factories
    • Robotics
    • Energy Storage Systems
  • Automotive
    • ADAS
    • Chassis
    • Drivetrain
    • Infotainment Systems
  • Communications and Data Center
    • Wired and wireless infrastructure
    • M2M devices
    • Industrial communication