onsemi — SiC Solutions and Gate Driver Innovation

5 kVrms 4.5-A/9-A Isolated Dual Channel Gate Driver

NCP51561

The onsemi NCP51561 gate driver boasts dual-channel isolation and impressive current capabilities, with 4.5-A and 9-A source and sink peak current, respectively. Designed to drive power MOSFETs and SiC MOSFET power switches efficiently, the NCP51561 offers quick and matched propagation delays.

With internal galvanic isolation of 5 kVrms and functional isolation between the two output drivers, the NCP51561 is capable of operating at a working voltage of up to 1500 VDC. This driver offers versatility and can be used in various configurations, including two low-side switches, two high-side switches, or a half-bridge driver with adjustable dead time. The ENA/DIS pin offers the option for simultaneous shutdown of both outputs.

Additionally, the NCP51561 features important protective functions such as individual under-voltage lockout for each gate driver and a Dead Time adjustment function.

Features

• 4.5 A Peak Source, 9 A Peak Sink Output Current Capability
• Flexible: Dual Low−Side, Dual High−Side or Half−Bridge Gate Driver
• Independent UVLO Protections for Both Output Drivers
• Output Supply Voltage from 6.5 V to 30 V with 5−V and 8−V for MOSFET, 13−V and 17−V UVLO for SiC, Thresholds.
• Common Mode Transient Immunity CMTI > 200 V/ns
• Propagation Delay Typical 36 ns with
  • 5 ns Max Delay Matching per Channel
  • 5 ns Max Pulse−Width Distortion
• User Programmable Input Logic
  • Single or Dual−Input Modes via ANB
  • ENABLE or DISABLE Mode
• User Programmable Dead−Time
• Isolation & Safety
  • 5 kVRMS Isolation for 1 Minute (per UL1577 Requirements) and 1500 V Peak Differential Voltage between Output Channels
  • 8000 VPK Reinforced Isolation Voltage (per VDE0884−11 Requirements)
  • CQC Certification per GB4943.1−2011
  • SGS FIMO Certification per IEC 62386−1
• These are Pb−Free Devices

Applications

• Motor Drives
• Isolated Converters in DC−DC and AC−DC Power Supply
• Server, Telecom, and Industrial Infrastructures
• UPS and Solar Inverters

Features

• D2PAK-7L package with Kelvin source configuration
• Excellent FOM [ = Rdson * Eoss ]
• New M3S technology: 22 mohm RDS(ON) with low Eon and Eoff losses
• 15V to 18V Gate Drive
• 100% Avalanche Tested
• Halide Free and RoHS Compliant

Applications

• Industrial applications
• UPS / ESS
• Solar
• EV charger

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