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onsemi — DC Fast Electric Vehicle (EV) Charging




onsemi DC Fast EV Charging Solutions

Did you know:

  • DC Fast EV Charging systems can add 100km range in less than 5 Min

  • Expected growth of Fast DC chargers is at a Compound Annual Growth Rate (CAGR) of approximately 30% for the next 5 years


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✓ In-depth product advice

✓ Project planning

✓ Technical resources

✓ Production & sourcing


Our top picks in onsemi's EV Charging portfolio

NTH4L022N120M3S EliteSiC MOSFET, 1200 V

22 mohm M3S Series in TO247-4LD package

The new family of onsemi 1200V M3S planar SiC MOSFETs (NTH4L022N120M3S) is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drives but also works well with 15V gate drives.


  • TO247-4LD package for low common source inductance
  • 15V to 18V Gate Drive
  • New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses
  • 100% Avalanche Tested


  • AC-DC Conversion
  • DC-AC Conversion
  • DC-DC Conversion


  • Reduced EON losses
  • 18V for best performance; 15V for compatibility with IGBT driver circuits
  • Improved power density
  • Improved robustness to unexpected incoming voltage spikes or ringing

End Products

  • UPS
  • Electric Vehicle Chargers
  • Solar Inverters
  • Energy Storage Systems

View datasheet

NCP51561 EliteSiC Isolated Dual-Channel Gate Driver

Featuring 4.5-A/9-A source and sink peak current respectively

The onsemi NCP51561 isolated dual-channel gate drivers with 4.5-A/9-A source and sink peak current (respectively) are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches.

The NCP51561 offers short and matched propagation delays. Two independent and 5 kVRMS (UL1577 rating) galvanically isolated gate driver channels can be used in any possible configurations of two low side, two high-side switches or a half-bridge driver with programmable dead time. An enable pin shutdown both outputs simultaneously when is set low.

The NCP51561 offers other important protection functions such as independent under-voltage lockout for both gate drivers and enable function.


  • 4.5-A Peak Source, 9-A Peak Sink Output Current Capability
  • Output Supply Voltage from 6.5 V to 30 V with 5-V, 8-V, and 17-V UVLO threshold.
  • Propagation Delay Typical 36 ns with 8 ns Max Delay Matching per channel
  • User Programmable Input Logic for Single or Dual-input modes via ANB
  • Common Mode Transient Immunity CMTI > 200 V/ns
  • 5 kVRMS Galvanic Isolation from input to each output & 1200 V peak differential voltage between output channels
  • User Programmable Dead-Time
  • Enable or Disable pin


  • Isolated Converters in DC-DC and AC-DC Power Supply
  • Server & Telecom Power supply
  • Industrial Drives
  • High Power DC/DC converters
  • Data Servers & Telecom Power bricks
  • UPS
  • Motor Drives


  • Improve efficiency and allow direct drive of high power switches
  • Offer proper protections for both MOSFET's and SiC FET
  • Very good signal integrity and fit with fast switching speed applications
  • Offer flexibility in design and topologies
  • Improved robustness in fast slew rate high voltage and high current switching applications
  • Provide safety and protection in applications requiring high isolation level
  • Allow full control of output behaviour according to selected topologies
  • Increased compatibility

End Products

  • High Power DC/DC converters
  • Data Servers
  • Telecom Power Bricks
  • UPS
  • Motor Drives

View Datasheet

View AND90063/D Application Note

Related: onsemi Isolated Compact IGBT Gate Drivers

Isolated Dual-Channel Gate Driver Evaluation Board

View EVBUM2817/D Evaluation Board Document »

EliteSiC Modules

Featuring a comprehensive selection of 900 V and 1200 V

These Silicon Carbide (SiC) Modules from onsemi have integrated SiC MOSFETs and SiC Diodes that provide lower conduction and switching losses, while enabling designers to achieve high efficiency and superior reliability.


View NXH010P120MNF1PNG Datasheet


View NXH040F120MNF1PTG Datasheet

Learn more: Silicon Carbide (SiC) Solutions

A dedicated Future Technology Magazine feature on Silicon Carbide and Gallium Nitride

Two next-generation materials for high performance power conversion and electric vehicles

These wide bandgap (WBG) materials will power future applications for high performance in Solar Power, Vehicle Electrification, Cloud Computing, EV Charging and other applications.

Explore this special issue of Future Technology Magazine that focuses on the complete onsemi Wide Bandgap Solutions in stock at Future Electronics.

See all onsemi products >>