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Manufacturer Part #

NXH003P120M3F2PTNG

NXH003P120 Series 1200 V 435 A 5 mOhm Dual N-Channel SiC MOSFET Module - PIM-36

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Date Code: 2324
Product Specification Section
onsemi NXH003P120M3F2PTNG - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Gate-Source Voltage-Max [Vgss]: 22V
Mounting Style: Vertical
Isolation Voltage-RMS: 4800V
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 435A
Configuration: Half Bridge
Operating Temp Range: -40°C to +175°C
Mounting Method: Press Fit
Pricing Section
Global Stock:
20
USA:
20
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
20
Multiple Of:
20
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$4,572.20
USD
Quantity
Web Price
20+
$228.61