ROHM, a pioneer in SiC development, was the first to successfully mass produce SiC MOSFETs in 2010 and continues to lead the industry in developing products that aim for further reductions in power loss. ROHM Semiconductor has now added 3rd Gen SiC MOSFETs, SiC Schottky Barrier Diodes (SBDs), and SiC modules to its market-proven SiC lineup. These new devices successfully address the needs of efficient power delivery and are key solutions for reducing loss during power conversion.
As the performance and characteristics of silicon approach their theoretical limits, ROHM from early on has focused on SiC as a viable successor to silicon as a semiconductor material due to its higher voltage resistance and lower loss (higher efficiency). ROHM's latest offering, a SiC MOSFET featuring a trench structure that maximizes SiC characteristics, represents a groundbreaking milestone with significant implications worldwide.
Optimum performance is achieved by combining exceedingly low loss with high-speed switching performance. As a result, efficiency during power conversion is improved and waste eliminated during production, contributing to increased miniaturization, lighter weight, and greater energy savings in a variety of equipment.
Although adopting a trench construction in SiC MOSFETs has been attracting increased attention due to its effectiveness in reducing ON resistance, there is a need to establish a structure for mitigating the electric field generated in the trench gate portion in order to guarantee long-term reliability. ROHM was able to meet this need and successfully mass-produce the industry's first trench-type SiC MOSFETs by utilizing a proprietary structure. As a result, switching performance is improved (approx. 35% lower input capacitance) and ON resistance reduced by 50% over conventional planar-type SiC MOSFETs.
ROHM has also developed a full SiC power module that incorporates these latest trench-type SiC MOSFETs in a 2-in-1 circuit with integrated SiC SBDs. This 1200V/180A module features the same rated current as SiC IGBT modules while reducing switching loss by approximately 42% vs. planar-type SiC MOSFETs.