text.skipToContent text.skipToNavigation

Référence fabricant

IR2111SPBF

IR2111 Series 600 V 250 mA 20 V Supply Dual Output Half Bridge Driver - SOIC-8

Modèle ECAD:
Nom du fabricant: Infineon
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
Infineon IR2111SPBF - Caractéristiques techniques
Attributes Table
Configuration: Half Bridge
No of Outputs: Dual
Peak Output Current: 250mA
Supply Voltage-Max: 20V
Style d'emballage :  SOIC-8
Méthode de montage : Surface Mount
Fonctionnalités et applications

The IR2111SPBF is a high voltage, high speed power MOSFET and IGBT driver, available in surface mount SOIC-8 package.

This device comes with independent high and low side referenced output channels and also it feature a high pulse current buffer stage designed for minimum driver cross-conduction.

Features:

  • Floating channel designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage dV/dt immune
  • Gate drive supply range from 10 to 20 V
  • Undervoltage lockout for both channels
  • CMOS Schmitt-triggered inputs with pull-down
  • Matched propagation delay for both channels
  • Internally set deadtime
  • High side output in phase with input
  • Also available LEAD-FREE

Specifications:

  • OFFSET : 600 V max.
  • IO+/- : 200 mA / 420 mA
  • VOUT : 10 - 20V
  • ton/off (typ.) : 750 & 150 ns
  • Deadtime (typ.) : 650 ns
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
20 Semaines
Commande minimale :
3800
Multiples de :
95
Total 
3 249,00 $
USD
Quantité
Prix unitaire
1
$0.975
40
$0.945
150
$0.92
400
$0.90
1 500+
$0.855
Product Variant Information section