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Référence fabricant
APT45GP120B2DQ2G
POWER MOS 7® 7 Series 1200 V 113 A 625 W Through Hole IGBT - T-MAX™
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| Nom du fabricant: | Microchip | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :1 par Bulk Style d'emballage :T-MAX Méthode de montage :Through Hole | ||||||||||
| Code de date: | |||||||||||
Microchip APT45GP120B2DQ2G - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description of Change: Qualification of Tin (Sn) as a new terminal plating for selected APL502, APL602, APT100, APT10M, APT11N, APT120, APT13G, APT150, APT15D, APT15G, APT200, APT20G, APT20M, APT25G, APT30D, APT30G, APT30M, APT30S, APT33G, APT35G, APT401, APT40D, APT40G, APT40M, APT45G, APT47N, APT501, APT502, APT50G, APT50M, APT601, APT602, APT603, APT60D, APT60M, APT60S, APT65G, APT75G, APT801, APT802, APT803, APT804, APT805, APT806, APT807, APT80G, APT94N, CC1105, CC1215, CC2515, CC3037, CC3038, CC3069 and CC3125 Microsemi Power Discrete TO-247 products.Reason for Change: To improve productivity by a change in terminal platingEstimated First Ship Date: 02 January 2026 (date code: 2601)
Description of Change:Initial Release/Please be advised that this is a change to the document only the product has not been changed. Microchip has released a new Document for the 1200 V Power MOS 7® Punch-through IGBT Collector Cut-off Current @ 125°C of devices. If you are using one of these devices please read the documentlocated at 1200 V Power MOS 7® Punch-through IGBT Collector Cut-off Current @ 125°C.1200 V Power MOS 7® Punch-through IGBT Collector Cut-off Current @ 125°CReason for Change:
Description of Change:Qualification of MG15F-0140B as a new mold compound material for various products available in SOT-227, TO-264, TO-268 and TO-247 packages at TEAM assembly site.Reason for Change:To improve productivity by qualifying MG15F-0140B as a new mold compound material at TEAM assembly site.***Issued final notification. Provided estimated first ship date to be on June 29, 2024.
PCN Status:Final NotificationDescription of Change:Qualification of MG15F-35AB and MG15F-0140B as a new mold compound material for various products available in TO-264, SOT-227 and TO-247 packages at FSTS assembly site.Reason for Change:To improve productivity by qualifying MG15F-35AB and MG15F-0140B as a new mold compound.Change Implementation Status:In ProgressEstimated First Ship Date:June 29, 2024 (date code: 2426)
PCN Status:Initial NotificationDescription of Change:Qualification of MG15F-35AB and MG15F-0140B as a new mold compound material for various products available in TO-264, SOT-227 and TO-247 packages at FSTS assembly site.Reason for Change:To improve productivity by qualifying MG15F-35AB and MG15F-0140B as a new mold compound material at FSTS assembly site.
Description of Change:Qualification of MG15F-0140B as a new mold compound material for various products available in SOT-227, TO-264, TO-268 and TO-247 packages at TEAM assembly site.Reason for Change:To improve productivity by qualifying MG15F-0140B as a new mold compound material at TEAM assembly site.
Description of Change:Qualification of MCSO6 as an additional fabrication site for selected APT1xx, APT2xx, APT3xx, APT4xx, APT5xx, APT6xx and APT8xx device families available in various packages.Reason for Change:To improve productivity by qualifying MCSO6 as an additional fabrication site.Change Implementation Status:In ProgressEstimated First Ship Date:January 16, 2023 (date code: 2303)
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=APT45GP120B2DQ2G&field4=Microchip&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--igbts/apt45gp120b2dq2g-microchip-5077191
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=APT45GP120B2DQ2G&field4=Microchip&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--igbts/apt45gp120b2dq2g-microchip-5077191
Microchip APT45GP120B2DQ2G - Caractéristiques techniques
| CE Voltage-Max: | 1200V |
| Collector Current @ 25C: | 113A |
| Power Dissipation-Tot: | 625W |
| Gate - Emitter Voltage: | ±30V |
| Pulsed Collector Current: | 170A |
| Turn-on Delay Time: | 18ns |
| Turn-off Delay Time: | 100ns |
| Qg Gate Charge: | 185nC |
| Reverse Recovery Time-Max: | 350ns |
| Leakage Current: | 100nA |
| Input Capacitance: | 3995pF |
| Operating Temp Range: | -55°C to +150°C |
| No of Terminals: | 3 |
| Style d'emballage : | T-MAX |
| Méthode de montage : | Through Hole |
Emballages disponibles
Qté d'emballage(s) :
1 par Bulk
Style d'emballage :
T-MAX
Méthode de montage :
Through Hole