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Référence fabricant
FF450R12ME7B11BPSA1
EconoDUAL™3 Series 1200 V 450 A Press-Fit Trench Field Stop IGBT Module
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :10 par Tray Style d'emballage :Module Méthode de montage :Chassis Mount | ||||||||||
| Code de date: | |||||||||||
Infineon FF450R12ME7B11BPSA1 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change informationSubject:Optimization of the bond layout for EconoDUALTM3 modules.Description:Old Pin 9 (Auxiliary Collector)NewPin 9 (Auxiliary Collector)Reason Continuous improvement for product reliability and process stabilityIntended start of delivery: From 2025 August onwards, during the ramp-up phase deliveries from both variants are possible.
Detailed change information:Subject :Reduction of clearance and creepage distances of 650 V and 1200 V EconoDUAL™ 3 modules Reason :To enable our customers to comply with the latest revision of the IEC 60664-1 standard, requiring a calculation based on minimum tolerances, we have checked and adjusted our specifications for clearance and creepage distances for the module. These adjustments now additionally take production tolerances into account to ensure even more accurate information in our datasheets. After a thorough review of our module, we have realized that the previous values in our datasheets needed to be changed as they did not provide correct nominal values. The updated values can be found below.
Detailed change informationSubject Harmonization of the frameReason Standardization of the frame for EconoDUAL™ 3 product portfolio,based on the design of the 1700V IGBT7 modules.Description? Increase of creepage distance to 15mm. Data sheets will beupdated accordingly.- Harmonized lid design- Larger bond balconies- Cu cladded main terminals for all Half-Bridges with integrated current sensor and H-Bridge configurations
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=FF450R12ME7B11BPSA1&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--igbts/ff450r12me7b11bpsa1-infineon-2141413
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- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=FF450R12ME7B11BPSA1&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--igbts/ff450r12me7b11bpsa1-infineon-2141413
Infineon FF450R12ME7B11BPSA1 - Caractéristiques techniques
| CE Voltage-Max: | 1200V |
| Gate - Emitter Voltage: | ±20V |
| Pulsed Collector Current: | 900A |
| Collector - Emitter Saturation Voltage: | 1.5V |
| Turn-on Delay Time: | 0.25µs |
| Turn-off Delay Time: | 0.39µs |
| Qg Gate Charge: | 7200nC |
| Leakage Current: | 100nA |
| Input Capacitance: | 69nF |
| Operating Temp Range: | -40°C to +175°C |
| No of Terminals: | 11 |
| Style d'emballage : | Module |
| Méthode de montage : | Chassis Mount |
Emballages disponibles
Qté d'emballage(s) :
10 par Tray
Style d'emballage :
Module
Méthode de montage :
Chassis Mount