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  6. STGD5NB120SZT4

STMicroelectronics | STGD5NB120SZT4

Manufacturer Part #

STGD5NB120SZT4

STGD5NB120SZ Series 1200 V 10 A Low Drop Internally Clamped IGBT - TO-252-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
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Product Specification Section
STMicroelectronics STGD5NB120SZT4 - Technical Attributes
Attributes Table
CE Voltage-Max: 1200V
Collector Current @ 25C: 10A
Power Dissipation-Tot: 75W
Gate - Emitter Voltage: ±20V
Pulsed Collector Current: 10A
Collector - Emitter Saturation Voltage: 2V
Turn-on Delay Time: 690ns
Turn-off Delay Time: 12.1µs
Leakage Current: -100A
Input Capacitance: 430pF
Thermal Resistance: 100°C/W
Operating Temp Range: -55°C to +150°C
No of Terminals: 3
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications
The STGD5NB120SZT4 is a low drop internally clamped PowerMESH IGBT Transistor. This resulting in an excellent trade-off between switching performance and low on-state behavior.

Features:

  • Low on-voltage drop (VCE(sat))
  • High current capability
  • Off losses include tail current
  • High voltage clamping

Applications:

  • Light dimmer
  • Inrush current limitation
  • Pre-heating for electronic lamp ballast
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,950.00
USD
Quantity
Unit Price
2,500
$0.78
5,000
$0.77
7,500
$0.765
10,000+
$0.755
Product Variant Information section