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Diodes Incorporated | DMN62D0LFB-7

Manufacturer Part #

DMN62D0LFB-7

DMN62D0LFB Series 60 V 100 mA N-Channel Enhancement Mode Mosfet - X1-DFN1006-3

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2319
Product Specification Section
Diodes Incorporated DMN62D0LFB-7 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 2Ω
Rated Power Dissipation: 470|mW
Qg Gate Charge: 0.45nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 100mA
Turn-on Delay Time: 3.4ns
Turn-off Delay Time: 26.4ns
Rise Time: 3.4ns
Fall Time: 16.3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Height - Max: 0.48mm
Length: 1mm
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$257.10
USD
Quantity
Unit Price
3,000
$0.0857
9,000
$0.0836
15,000
$0.0826
45,000
$0.0806
75,000+
$0.0789
Product Variant Information section