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Manufacturer Part #

FDPF39N20

FDPF39N20 Series 200 V 39 A 66 mOhm N-Ch UniFet Mosfet - TO-220-3FP

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
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Product Specification Section
onsemi FDPF39N20 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 66mΩ
Rated Power Dissipation: 37|W
Qg Gate Charge: 38nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 39A
Turn-on Delay Time: 30ns
Turn-off Delay Time: 150ns
Rise Time: 160ns
Fall Time: 150ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Height - Max: 16.07mm
Length: 10.36mm
Input Capacitance: 1640pF
Package Style:  TO-220F
Mounting Method: Through Hole
Features & Applications

The FDPF39N20 is a N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Features:

  • 39 A, 300 V, RDS(on) = 0.066 ?@VGS = 10 V
  • Low gate charge ( typical 38 nC)
  • Low Crss ( typical 57 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
1000
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,050.00
USD
Quantity
Unit Price
1
$1.15
40
$1.12
150
$1.09
750
$1.05
2,500+
$0.995
Product Variant Information section