Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.Please contact your salesperson for assistance.
Free shipping within the continental US over $50. Conditions apply
Manufacturer Part #
FDT458P
Single P-Channel 30 V 210 mOhm 3.5 nC 3 W PowerTrench SMT Mosfet - SOT-223
| | |||||||||||
| | |||||||||||
| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:4000 per Reel Package Style:SOT-223 (TO-261-4, SC-73) Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
onsemi FDT458P - Product Specification
Shipping Information:
ECCN:
PCN Information:
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FDT458P&field4=onsemi&field18=https://p1na.futureelectronics.com/de/p/semiconductors--discretes--transistors--mosfets/fdt458p-onsemi-8045684
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FDT458P&field4=onsemi&field18=https://p1na.futureelectronics.com/de/p/semiconductors--discretes--transistors--mosfets/fdt458p-onsemi-8045684
onsemi FDT458P - Technical Attributes
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | -30V |
| Drain-Source On Resistance-Max: | 210mΩ |
| Rated Power Dissipation: | 3W |
| Qg Gate Charge: | 3.5nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 3.4A |
| Turn-on Delay Time: | 9ns |
| Turn-off Delay Time: | 20ns |
| Rise Time: | 23ns |
| Fall Time: | 4ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | -3V |
| Technology: | PowerTrench |
| Height - Max: | 6.7mm |
| Length: | 1.8mm |
| Input Capacitance: | 205pF |
| Package Style: | SOT-223 (TO-261-4, SC-73) |
| Mounting Method: | Surface Mount |
Features & Applications
The FDT458P is a 30 V 130 Ω P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
Features:
- 3.4 A, -30 V
- RDS(ON) = 130 mΩ @ VGS = 10 V
- RDS(ON) = 200 mΩ @ VGS = 4.5 V
- Fast switching speed
- Low gate charge (2.5nC typical)
- High performance trench technology
- High power and current handling capability
Applications:
- Battery chargers
- Motor drives
Available Packaging
Package Qty:
4000 per Reel
Package Style:
SOT-223 (TO-261-4, SC-73)
Mounting Method:
Surface Mount