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Manufacturer Part #
FDV303N
N-Channel 25 V 0.45 Ohm Surface Mount Digital FET - SOT-23-3
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:3000 per Reel Package Style:SOT-23 (SC-59,TO-236) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2519 | ||||||||||
Product Specification Section
onsemi FDV303N - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
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onsemi FDV303N - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 25V |
| Drain-Source On Resistance-Max: | 0.45Ω |
| Rated Power Dissipation: | 0.35|W |
| Qg Gate Charge: | 2.3nC |
| Package Style: | SOT-23 (SC-59,TO-236) |
| Mounting Method: | Surface Mount |
Features & Applications
The FDV303N is a 25 V 0.45 O N-Channel enhancement mode field effect transistors are produced using high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions
Features:
- 25 V, 0.68 A continuous, 2 A Peak.
- RDS(ON) = 0.45 O @ VGS = 4.5 V
- RDS(ON) = 0.6 O @ VGS= 2.7 V.
- Low level gate drive requirements allowing direct operation in 3 V circuits. VGS(th) 1.5 V.
- Gate-Source Zener for ESD ruggedness. 6 kV Human Body Model.
- Compact industry standard SOT-23 surface mount package.
- Alternative to TN0200T and TN0201T
Applications:
- Battery circuits
- Inverter
- compact portable electronic devices
View the complete family of N-channel mosfets
Pricing Section
Global Stock:
63,000
USA:
63,000
Factory Lead Time:
12 Weeks
Quantity
Unit Price
3,000
$0.0247
9,000
$0.024
15,000
$0.0238
30,000
$0.0234
60,000+
$0.0228
Product Variant Information section
Available Packaging
Package Qty:
3000 per Reel
Package Style:
SOT-23 (SC-59,TO-236)
Mounting Method:
Surface Mount