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  6. IMZ120R060M1HXKSA1

Infineon | IMZ120R060M1HXKSA1

Manufacturer Part #

IMZ120R060M1HXKSA1

IMZ Series 1200 V 60 mOhm 31 nC Through Hole Silicon Carbide Mosfet - TO-247-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2509
Product Specification Section
Infineon IMZ120R060M1HXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain-Source On Resistance-Max: 83mΩ
Rated Power Dissipation: 150W
Qg Gate Charge: 31nC
Gate-Source Voltage-Max [Vgss]: 23V
Drain Current: 36A
Turn-on Delay Time: 6ns
Turn-off Delay Time: 12.7ns
Rise Time: 5ns
Fall Time: 10.8ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4.5V
Technology: SiC
Input Capacitance: 1060pF
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
240
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
240
Multiple Of:
240
Total
$1,204.80
USD
Quantity
Unit Price
240
$5.02
480
$4.97
720+
$4.92
Product Variant Information section