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Manufacturer Part #
IPD023N04NF2SATMA1
IPD023N04NF2S Series 40 V 143 A 2.3 mOhm Single N-Channel MOSFET - TO-252-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2000 per Reel Package Style:TO-252-3 (DPAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Infineon IPD023N04NF2SATMA1 - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
File
Date
Location Change
08/14/2025 Details and Download
Description of Change:Capacity expansion by introduction of an additional assembly and test location at Huayi Microelectronics Co., Ltd (HYME), China for dedicated N-channel power MOSFETs in PG-TO252-3 and PGTO263- 3 package.Reason for Change:Capacity expansion for existing assembly and final test site at Great Team Backend Foundry (GTBF)
Part Status:
Active
Active
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Infineon IPD023N04NF2SATMA1 - Technical Attributes
Attributes Table
| Product Status: | Active |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 2.3mΩ |
| Rated Power Dissipation: | 150W |
| Qg Gate Charge: | 68nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 27A |
| Turn-on Delay Time: | 16ns |
| Turn-off Delay Time: | 35ns |
| Rise Time: | 15ns |
| Fall Time: | 15ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2.8V |
| Input Capacitance: | 4800pF |
| Series: | StrongIRFET 2 |
| Package Style: | TO-252-3 (DPAK) |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
Germany:
0
On Order:
0
Factory Lead Time:
8 Weeks
Quantity
Unit Price
2,000
$0.46
4,000
$0.455
6,000
$0.45
8,000+
$0.445
Product Variant Information section
Available Packaging
Package Qty:
2000 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount