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Infineon | IPD60R360P7ATMA1

Manufacturer Part #

IPD60R360P7ATMA1

Single N-Channel 650 V 360 mOhm 13 nC CoolMOS™ Power Mosfet - DPAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD60R360P7ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.36Ω
Rated Power Dissipation: 41W
Qg Gate Charge: 13C
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 9A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 42ns
Rise Time: 7ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Input Capacitance: 555pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,262.50
USD
Quantity
Unit Price
2,500
$0.505
5,000
$0.50
7,500
$0.495
12,500+
$0.485
Product Variant Information section