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Infineon | IPD80R360P7ATMA1

Manufacturer Part #

IPD80R360P7ATMA1

Single N-Channel 800 V 360 mOhm 30 nC CoolMOS™ Power Mosfet - DPAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2507
Product Specification Section
Infineon IPD80R360P7ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 0.36Ω
Rated Power Dissipation: 84W
Qg Gate Charge: 30nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 13A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 40ns
Rise Time: 6ns
Fall Time: 6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 930pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$2,525.00
USD
Quantity
Unit Price
2,500
$1.01
5,000
$0.99
7,500+
$0.975
Product Variant Information section