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Manufacturer Part #
IRF630
Single N-Channel 200 V 0.4 Ohm 31 nC 75 W Mesh overlay™ II Power Mosfet-TO-220-3
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) | ||||||||||
| Date Code: | 2328 | ||||||||||
Product Specification Section
STMicroelectronics IRF630 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF630&field4=STMicroelectronics&field18=https://p1na.futureelectronics.com/de/p/semiconductors--discretes--transistors--mosfets/irf630-stmicroelectronics-9028666
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF630&field4=STMicroelectronics&field18=https://p1na.futureelectronics.com/de/p/semiconductors--discretes--transistors--mosfets/irf630-stmicroelectronics-9028666
STMicroelectronics IRF630 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 0.4Ω |
| Rated Power Dissipation: | 75|W |
| Qg Gate Charge: | 31nC |
| Package Style: | TO-220-3 (TO-220AB) |
Features & Applications
The IRF630 power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
Features:
- Extremely high dv/dt capability
- Very low intrinsic capacitances
- Gate charge minimized
Applications:
- Switching application
Pricing Section
Global Stock:
3,000
USA:
3,000
On Order:
0
Factory Lead Time:
13 Weeks
Quantity
Unit Price
1
$0.465
100
$0.45
300
$0.44
1,500
$0.43
5,000+
$0.405
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)