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Infineon | IRFH5300TRPBF

Manufacturer Part #

IRFH5300TRPBF

Single N-Channel 30 V 2.1 mOhm 120 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2250
Product Specification Section
Infineon IRFH5300TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 2.1mΩ
Rated Power Dissipation: 3.6W
Qg Gate Charge: 120nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 40A
Turn-on Delay Time: 26ns
Turn-off Delay Time: 31ns
Rise Time: 30ns
Fall Time: 13ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.35V
Technology: Si
Height - Max: 0.9mm
Length: 6mm
Input Capacitance: 7200pF
Package Style:  PQFN 5 x 6 mm
Mounting Method: Surface Mount
Features & Applications

International Rectifier, a world leader in power management technology, today introduced a family of HEXFET power MOSFETs including the IRFH5300TRPbF that delivers the industry’s lowest on-state resistance (RDS(on)).

The new power MOSFETs featuring IR’s latest silicon technology are the company’s first devices available in a 5x6mm PQFN package with optimized copper clip and solder die. The IRFH5300TRPbF is a 30V device delivers industry leading RDS(on) of only 1.4 mOhm (max.) at 10V Vgs to significantly cut conduction losses for DC motor drive applications such as hand tools.

The 30V IRFH5300TRPbF devices are designed for DC switch applications such as active ORing and DC motor drive applications requiring high current carrying capability and high efficiency. The IRFH5300TRPbF features ultra low RDS(on) of 1.4 mOhm (max.) combined with just 50 nC gate charge (Qg).

The IRFH5300TRPBF is a  30v,100a,1.4mohm,PQFN package.

Pricing Section
Global Stock:
288,000
USA:
288,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$2,220.00
USD
Quantity
Unit Price
4,000
$0.555
8,000
$0.55
12,000+
$0.54
Product Variant Information section