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STMicroelectronics | STB28N65M2

Manufacturer Part #

STB28N65M2

N-Channel 650 V 0.18 Ohm 35 nC 170 W SMT MDmesh M2 Mosfet - D2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2530
Product Specification Section
STMicroelectronics STB28N65M2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.18Ω
Rated Power Dissipation: 170W
Qg Gate Charge: 35nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 20A
Turn-on Delay Time: 13.4ns
Turn-off Delay Time: 59ns
Rise Time: 10ns
Fall Time: 8.8ns
Gate Source Threshold: 3V
Technology: MDmesh
Input Capacitance: 1440pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$1,800.00
USD
Quantity
Unit Price
1,000
$1.80
2,000
$1.79
3,000
$1.78
4,000
$1.77
5,000+
$1.76
Product Variant Information section