Manufacturer Part #
STB35N65M5
N-Channel 650 V 27 A 98 mOhm 160 W Surface Mount Power Mosfet - D2PAK-3
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Reel Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
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Product Specification Section
STMicroelectronics STB35N65M5 - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
STMicroelectronics STB35N65M5 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain-Source On Resistance-Max: | 98Ω |
| Rated Power Dissipation: | 160|W |
| Qg Gate Charge: | 83nC |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Features & Applications
The STB35N65M5 is a N-channel 650 V, 0.085 Ω, 27 A, MDmesh™ V Power MOSFET. These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.
The resulting product has extremely low on-resistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. It is available in a D²PAK Package.
Features:
- Worldwide best RDS(on)* area
- Higher VDSS rating
- High dv/dt capability
- Excellent switching performance
- Easy to drive
- 100% avalanche tested
Applications:
- Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
14 Weeks
Quantity
Unit Price
1,000+
$3.85
Product Variant Information section
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount