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Référence fabricant

STD18N55M5

N-Channel 550 V 0.18 mOhm 13 A 90 W Surface Mount Power Mosfet - TO-252

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics STD18N55M5 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 550V
Drain-Source On Resistance-Max: 0.18Ω
Rated Power Dissipation: 90|W
Qg Gate Charge: 31nC
Style d'emballage :  TO-252-3 (DPAK)
Méthode de montage : Surface Mount
Fonctionnalités et applications

The STD18N55M5 is a N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. 

The resulting product has extremely low on-resistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features:

  • DPAK worldwide best RDS(on)
  • Higher VDSS rating
  • High dv/dt capability
  • Excellent switching performance
  • Easy to drive
  • 100% avalanche tested

Applications:

  • Switching application

View the list of available STD18N Series of MOSFETs

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
14 Semaines
Commande minimale :
2500
Multiples de :
2500
Total 
3 650,00 $
USD
Quantité
Prix unitaire
2 500+
$1.46
Product Variant Information section