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Référence fabricant
STF12NK60Z
N-Channel 650 V 0.64 Ω SuperMESH™ Power MosFet - TO-220FP
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| Nom du fabricant: | STMicroelectronics | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :TO-220FP (TO-220FPAB) | ||||||||||
| Code de date: | 1414 | ||||||||||
STMicroelectronics STF12NK60Z - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=STF12NK60Z&field4=STMicroelectronics&field18=https://p1na.futureelectronics.com/de/p/semiconductors--discretes--transistors--mosfets/stf12nk60z-stmicroelectronics-5067493
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=STF12NK60Z&field4=STMicroelectronics&field18=https://p1na.futureelectronics.com/de/p/semiconductors--discretes--transistors--mosfets/stf12nk60z-stmicroelectronics-5067493
STMicroelectronics STF12NK60Z - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 640mΩ |
| Rated Power Dissipation: | 35|W |
| Qg Gate Charge: | 59nC |
| Style d'emballage : | TO-220FP (TO-220FPAB) |
Fonctionnalités et applications
The STF12NK60Z SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage Power MOSFETs.
Features:
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing repeatability
Application:
- Switching applications
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
TO-220FP (TO-220FPAB)