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STMicroelectronics | STP18N65M5

Manufacturer Part #

STP18N65M5

STP18N65M5 Series 650 V 0.22 Ohm N-Channel MDmesh™ V Power Mosfet - TO-220

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2315
Product Specification Section
STMicroelectronics STP18N65M5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.22Ω
Rated Power Dissipation: 110W
Qg Gate Charge: 31nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 15A
Rise Time: 7ns
Fall Time: 9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 14.45mm
Length: 10.4mm
Input Capacitance: 1240pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
120
USA:
120
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1.43
USD
Quantity
Unit Price
1
$1.43
40
$1.41
150
$1.40
750
$1.37
2,500+
$1.34
Product Variant Information section