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STMicroelectronics | SCT040W120G3AG

Manufacturer Part #

SCT040W120G3AG

1200 V 40 A 312W Through Hole SiC N-Channel MOSFETs - HiP247

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2522
Product Specification Section
STMicroelectronics SCT040W120G3AG - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1.2V
Drain Current: 40A
Input Capacitance: 1329pF
Power Dissipation: 312W
Operating Temp Range: -55°C to +200°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
600
USA:
600
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
17 Weeks
Minimum Order:
600
Multiple Of:
600
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$4,170.00
USD
Quantity
Unit Price
600+
$6.95
Product Variant Information section