Free shipping over $100 USD. Conditions apply
Manufacturer Part #
SCT10N120AG
1200 V 12 A 520 Ohm Automotive-Grade Silicon Carbide Power MOSFET
| | |||||||||||
| | |||||||||||
| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:600 per Package Style:TO-247-3 Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
STMicroelectronics SCT10N120AG - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=EU&field16=en&field2=SCT10N120AG&field4=STMicroelectronics&field18=https://p1emea.futureelectronics.com/de/p/semiconductors--discretes--transistors--silicon-carbide-mosfets-sic-mosfets/sct10n120ag-stmicroelectronics-3189744
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=EU&field16=en&field2=SCT10N120AG&field4=STMicroelectronics&field18=https://p1emea.futureelectronics.com/de/p/semiconductors--discretes--transistors--silicon-carbide-mosfets-sic-mosfets/sct10n120ag-stmicroelectronics-3189744
STMicroelectronics SCT10N120AG - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain Current: | 12A |
| Input Capacitance: | 290pF |
| Power Dissipation: | 150W |
| Operating Temp Range: | -55°C to +200°C |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
Germany:
0
On Order:
0
Factory Lead Time:
17 Weeks
Quantity
Unit Price
1
$4.41
15
$4.31
50
$4.25
150
$4.19
500+
$4.06
Product Variant Information section
Available Packaging
Package Qty:
600 per
Package Style:
TO-247-3
Mounting Method:
Through Hole