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Manufacturer Part #

SCT4018KRC15

1200 V 81A 312W Through Hole N-Channel SiC Power MOSFET-TO-247-4L

ECAD Model:
Mfr. Name: ROHM
Standard Pkg:
Date Code:
Product Specification Section
ROHM SCT4018KRC15 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 81A
Input Capacitance: 4532pF
Power Dissipation: 312W
Operating Temp Range: 175°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
40 Weeks
Minimum Order:
120
Multiple Of:
120
Total
$2,900.40
USD
Quantity
Unit Price
120
$24.17
240+
$23.95