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STMicroelectronics | SCTWA70N120G2V-4

Manufacturer Part #

SCTWA70N120G2V-4

1200 V 21 mOhm typ., 91 A Silicon Carbide Power Mosfet - HiP247-4

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Mfr. Name: STMicroelectronics
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Product Specification Section
STMicroelectronics SCTWA70N120G2V-4 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 91A
Input Capacitance: 3540pF
Power Dissipation: 547W
Operating Temp Range: -55°C to +200°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
Germany:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
1
Multiple Of:
60
Total
$21.39
USD
Quantity
Unit Price
1
$21.39
3
$21.11
10
$20.81
20
$20.64
30+
$20.37
Product Variant Information section