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Manufacturer Part #
SCTWA70N120G2V-4
1200 V 21 mOhm typ., 91 A Silicon Carbide Power Mosfet - HiP247-4
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:30 per Package Style:TO-247-4 Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
STMicroelectronics SCTWA70N120G2V-4 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
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ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
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STMicroelectronics SCTWA70N120G2V-4 - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain Current: | 91A |
| Input Capacitance: | 3540pF |
| Power Dissipation: | 547W |
| Operating Temp Range: | -55°C to +200°C |
| Package Style: | TO-247-4 |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
Germany:
0
On Order:
0
Factory Lead Time:
17 Weeks
Quantity
Unit Price
30
$20.78
60
$20.65
90
$20.58
120
$20.53
150+
$20.37
Product Variant Information section
Available Packaging
Package Qty:
30 per
Package Style:
TO-247-4
Mounting Method:
Through Hole