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  6. IGB110S10S1XTMA1

Infineon | IGB110S10S1XTMA1

Manufacturer Part #

IGB110S10S1XTMA1

CoolGaN Series 100 V 9 A 11 mOhm Single N-Channel GaN MOSFET - PG-TSON‑4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IGB110S10S1XTMA1 - Technical Attributes
Attributes Table
Product Status: Active
Technology: GaNFET (Gallium Nitride)
Fet Type: N-Ch
Drain Current: 9A
No of Channels: 1
Qg Gate Charge: 3.4nC
Drain-to-Source Voltage [Vdss]: 100V
Gate-Source Voltage-Max [Vgss]: 6.5V
Input Capacitance: 340pF
Rated Power Dissipation: 2.5W
Operating Temp Range: -40°C to +150°C
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$3,300.00
USD
Quantity
Unit Price
5,000+
$0.66
Product Variant Information section
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Article
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