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Manufacturer Part #

BFP840ESDH6327XTSA1

BFP840ESD: 2.25 V 35mA Robust Low Noise Silicon Germanium Bipolar RF Transistor

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BFP840ESDH6327XTSA1 - Technical Attributes
Attributes Table
Polarity: NPN
Type: RF
CE Voltage-Max: 2.25V
Collector Current Max: 35mA
Power Dissipation-Tot: 75mW
Collector - Base Voltage: 2.9V
DC Current Gain-Min: 150
Collector - Current Cutoff: 400nA
Configuration: Single
Frequency - Transition: 80GHz
Noise Figure: 1.45dB
Moisture Sensitivity Level: 1
Package Style:  SOT-343 (SC-82, SC-70-4)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$570.00
USD
Quantity
Unit Price
3,000
$0.19
6,000
$0.188
9,000
$0.187
12,000
$0.186
15,000+
$0.183
Product Variant Information section