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onsemi | ECH8695R-TL-W

Manufacturer Part #

ECH8695R-TL-W

ECH8695R Series 24 V 11 A 9.1 mOhm Dual N-Channel Power MOSFET - SOT-28

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi ECH8695R-TL-W - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 24V
Drain-Source On Resistance-Max: 9.1mΩ
Rated Power Dissipation: 1.5W
Qg Gate Charge: 10nC
Gate-Source Voltage-Max [Vgss]: 12.5V
Drain Current: 11A
Turn-on Delay Time: 300ns
Turn-off Delay Time: 19.7ns
Rise Time: 320ns
Fall Time: 22.3ns
Gate Source Threshold: 1.3V
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
24,000
Factory Lead Time:
20 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$885.00
USD
Quantity
Unit Price
3,000
$0.295
6,000
$0.29
12,000+
$0.285
Product Variant Information section