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onsemi | FDT458P

Manufacturer Part #

FDT458P

Single P-Channel 30 V 210 mOhm 3.5 nC 3 W PowerTrench SMT Mosfet - SOT-223

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2613
Product Specification Section
onsemi FDT458P - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: -30V
Drain-Source On Resistance-Max: 210mΩ
Rated Power Dissipation: 3W
Qg Gate Charge: 3.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 3.4A
Turn-on Delay Time: 9ns
Turn-off Delay Time: 20ns
Rise Time: 23ns
Fall Time: 4ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: -3V
Technology: PowerTrench
Height - Max: 6.7mm
Length: 1.8mm
Input Capacitance: 205pF
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Features & Applications

The FDT458P is a 30 V 130 Ω P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Features:

  • 3.4 A, -30 V
  • RDS(ON) = 130 mΩ @ VGS = 10 V
  • RDS(ON) = 200 mΩ @ VGS = 4.5 V
  • Fast switching speed
  • Low gate charge (2.5nC typical)
  • High performance trench technology 
  • High power and current handling capability

Applications:

  • Battery chargers
  • Motor drives
Pricing Section
Global Stock:
8,000
USA:
8,000
On Order:Order inventroy details
12,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$1,540.00
USD
Quantity
Unit Price
4,000
$0.385
8,000
$0.38
16,000
$0.375
20,000+
$0.37
Product Variant Information section