Référence fabricant
FQPF27P06
P-CH/60V/17A/0.07OHM
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| Nom du fabricant: | onsemi | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :1000 par Tube Style d'emballage :TO-220FP (TO-220FPAB) Méthode de montage :Through Hole | ||||||||||
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onsemi FQPF27P06 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
onsemi FQPF27P06 - Caractéristiques techniques
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 70mΩ |
| Rated Power Dissipation: | 47|W |
| Qg Gate Charge: | 43nC |
| Style d'emballage : | TO-220FP (TO-220FPAB) |
| Méthode de montage : | Through Hole |
Fonctionnalités et applications
The FQPF27P06 Series of 60 V 70 mOhm Flange Mount P-Channel MOSFET - TO-220F.These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive,DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Features:
- -17 A, -60 V, RDS(on)= 0.07 W@VGS= -10 V
- Low gate charge ( typical 33 nC)
- Low Crss (typical 120 pF)
- Fast switching
- 100 % avalanche tested
- Improved dv/dt capability
- 175 ºC maximum junction temperature rating
View the complete FQPF2 series of MOSFETS
Emballages disponibles
Qté d'emballage(s) :
1000 par Tube
Style d'emballage :
TO-220FP (TO-220FPAB)
Méthode de montage :
Through Hole