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Infineon | IPD60R950C6ATMA1

Manufacturer Part #

IPD60R950C6ATMA1

Single N-Channel 600 V 950 mOhm 13 nC CoolMOS™ Power Mosfet - DPAK-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD60R950C6ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 950mΩ
Rated Power Dissipation: 37W
Qg Gate Charge: 13nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 4.4A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 60ns
Rise Time: 8ns
Fall Time: 13ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 280pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,075.00
USD
Quantity
Unit Price
2,500
$0.43
5,000
$0.42
10,000
$0.415
12,500+
$0.41
Product Variant Information section