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Manufacturer Part #

IPD65R225C7ATMA1

Single N-Channel 650 V 225 mOhm 20 nC CoolMOS™ Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD65R225C7ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 225mΩ
Rated Power Dissipation: 63|W
Qg Gate Charge: 20nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
11 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$2,462.50
USD
Quantity
Unit Price
2,500
$0.985
5,000
$0.97
7,500+
$0.96
Product Variant Information section