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Manufacturer Part #
IPF009N04NF2SATMA1
N-Channel 40 V 0.9 mOhm 210 nC SMT StrongIRFETTM2 Power Mosfet - PG-TO-263-7
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:800 per Reel Package Style:TO-263-7 (D2PAK7) Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Infineon IPF009N04NF2SATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Location Change
08/14/2025 Details and Download
Description of Change:Capacity expansion by introduction of an additional assembly and test location at Huayi Microelectronics Co., Ltd (HYME), China for dedicated N-channel power MOSFETs in PG-TO252-3 and PGTO263- 3 package.Reason for Change:Capacity expansion for existing assembly and final test site at Great Team Backend Foundry (GTBF)
Part Status:
Active
Active
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Infineon IPF009N04NF2SATMA1 - Technical Attributes
Attributes Table
| Product Status: | Active |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 0.9mΩ |
| Rated Power Dissipation: | 3.8W |
| Qg Gate Charge: | 210nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 49A |
| Turn-on Delay Time: | 27ns |
| Turn-off Delay Time: | 90ns |
| Rise Time: | 51ns |
| Fall Time: | 40ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2.8V |
| Input Capacitance: | 14900pF |
| Series: | StrongIRFET 2 |
| Package Style: | TO-263-7 (D2PAK7) |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
18 Weeks
Quantity
Unit Price
800
$1.59
1,600
$1.58
3,200
$1.57
4,000+
$1.56
Product Variant Information section
Available Packaging
Package Qty:
800 per Reel
Package Style:
TO-263-7 (D2PAK7)
Mounting Method:
Surface Mount