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Référence fabricant
IPG20N06S2L65ATMA1
Dual N-Channel 55 V 65 mOhm 1.6 nC SMT OptiMOS™ Power Mosfet - PG-TDSON-8-10
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :5000 par Reel Style d'emballage :TDSON-8 Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2538 | ||||||||||
Infineon IPG20N06S2L65ATMA1 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Change of Subcon Plating from Technic Suzhou Semiconductor Engineering to Wuxi Welnew Micro Electronic for products TDSON Duo.DESCRIPTION:.PROCESS - ASSEMBLY: Move all or parts of production to a different assembly site.OLD: Technic Suzhou Semiconductor Engineering Co., Ltd.NEW: Wuxi Welnew Micro Electronic Co., Ltd.Reason/Motivation: The Subcon plating Technic Suzhou Semiconductor Engineering operation ceased in mid-June 2025 due to local government reclaim on the land that are occupied by the facility. To ensure continuity, Wuxi Welnew Micro Electronic is chosen to replace Subcon plating Technic Suzhou Semiconductor Engineering.
Description of Change:Change of Subcon Plating from Technic Suzhou Semiconductor Engineering to Wuxi Welnew Micro Electronic for products TDSON DUO for PCN 2025-091-AReason for Change:The Subcon plating Technic Suzhou Semiconductor Engineering will cease its operations by mid-June 2025. This decision has been made due to the local government's plan to reclaim the land currently occupied by the facility.
Detailed Change Information:Subject:Introduction of an additional assembly production and final test location at Infineon Technologies (Wuxi) Co. Ltd., Wuxi, China for products IPGxReason / Motivation:Due to increasing demand for Infineon Automotive products exceeding current capacity in Melaka, Infineon is extending manufacturing capabilities to Wuxi and enabling flexible production for TDSON Duo packages.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IPG20N06S2L65ATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/es/p/semiconductors--discretes--transistors--mosfets/ipg20n06s2l65atma1-infineon-3060176
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IPG20N06S2L65ATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/es/p/semiconductors--discretes--transistors--mosfets/ipg20n06s2l65atma1-infineon-3060176
Infineon IPG20N06S2L65ATMA1 - Caractéristiques techniques
| Fet Type: | Dual N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 65mΩ |
| Rated Power Dissipation: | 43W |
| Qg Gate Charge: | 9.4nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 20A |
| Turn-on Delay Time: | 2ns |
| Turn-off Delay Time: | 10ns |
| Rise Time: | 3ns |
| Fall Time: | 7ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 1.6V |
| Technology: | OptiMOS |
| Input Capacitance: | 315pF |
| Style d'emballage : | TDSON-8 |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
5000 par Reel
Style d'emballage :
TDSON-8
Méthode de montage :
Surface Mount