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Infineon | IRF7451TRPBF

Manufacturer Part #

IRF7451TRPBF

Single N-Channel 150 V 0.09 Ohm 41 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRF7451TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 0.09Ω
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 28nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 3.6A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 17ns
Rise Time: 4.2ns
Fall Time: 15ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5.5V
Input Capacitance: 990pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$1,880.00
USD
Quantity
Unit Price
4,000
$0.47
8,000
$0.465
16,000+
$0.46
Product Variant Information section