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Manufacturer Part #
IRFR3710ZTRPBF
Single N-Channel 100 V 18 mOhm 100 nC HEXFET® Power Mosfet - TO-252AA
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| Nombre del Fabricante: | Infineon | ||||||||||
| Número de pieza del fabricante: | Product Variant Information section Embalajes disponiblesCant. de paquetes:2000 por Reel Estilo de empaquetado:TO-252AA Método de montaje:Surface Mount | ||||||||||
| Código de fecha: | 2338 | ||||||||||
Infineon IRFR3710ZTRPBF - Especificaciones de producto
Información de envío:
ECCN:
Información del CP:
Detailed change informationSubject Extension of shelf lifetime from 3 to 5 years for products in SMD (Surface Mount Devices) and Leadless packagesReason Extension of shelf lifetime and product availabilityDescription Maximum storage timeOld - 3 years New- 5 yearsIntended start of delivery Immediately
Detailed change information:Subject:Moisture Barrier Bag and Anti-Static shielding bag elimination for MSL1 devices at Tijuana, Mexico.Reason: Standardization of packing material for MSL1 devices at Tijuana, Mexico.Packing Material and Method:OLD:Moisture Barrier Bag + Humidity Indicator Card + Desiccant + Dry Pack andAnti-Static shielding bag + Dry PackNEW:Reel in packing box without Dry Pack
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Estado del producto:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=EU&field16=es&field2=IRFR3710ZTRPBF&field4=Infineon&field18=https://p1emea.futureelectronics.com/es/p/semiconductors--discretes--transistors--mosfets/irfr3710ztrpbf-infineon-1173875
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=EU&field16=es&field2=IRFR3710ZTRPBF&field4=Infineon&field18=https://p1emea.futureelectronics.com/es/p/semiconductors--discretes--transistors--mosfets/irfr3710ztrpbf-infineon-1173875
Infineon IRFR3710ZTRPBF - Caracteristicas Técnicas
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 18mΩ |
| Rated Power Dissipation: | 140W |
| Qg Gate Charge: | 100nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 56A |
| Turn-on Delay Time: | 14ns |
| Turn-off Delay Time: | 53ns |
| Rise Time: | 43ns |
| Fall Time: | 42ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Height - Max: | 2.39mm |
| Length: | 6.73mm |
| Input Capacitance: | 2930pF |
| Estilo de empaquetado: | TO-252AA |
| Método de montaje: | Surface Mount |
Embalajes disponibles
Cant. de paquetes:
2000 por Reel
Estilo de empaquetado:
TO-252AA
Método de montaje:
Surface Mount