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Manufacturer Part #
IRFSL9N60APBF
Single N-Channel 600 V 0.75 Ohms Through Hole Power Mosfet - I2PAK (TO-262)
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:50 per Tube Package Style:TO-262 (I2PAK) Mounting Method:Through Hole |
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Vishay IRFSL9N60APBF - Product Specification
Shipping Information:
HTS Code:
ECCN:
PCN Information:
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
Part Status:
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Vishay IRFSL9N60APBF - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 0.75Ω |
| Rated Power Dissipation: | 170|W |
| Qg Gate Charge: | 49nC |
| Package Style: | TO-262 (I2PAK) |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-262 (I2PAK)
Mounting Method:
Through Hole